MCQ on Transistor Biasing(Transistor Biasing Multiple Choice Questions and Answers)

MCQ on Transistor Biasing with answers and explanations for placement tests and job interviews. These solved Transistor Biasing MCQ are useful for the campus placement for all freshers including Engineering Students, MCA students, Computer and IT Engineers, etc.

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So let’s see the set of MCQ on Transistor Biasing (Multiple Choice Questions & Answers on “Transistor Biasing ”).

Guideline of Transistors Biasing MCQ:

This MCQ on Transistors Biasing is intended for checking your knowledge of Transistors Biasing. It takes 40 minutes to pass the MCQ on Transistors Biasing. If you don’t finish the Transistor Biasing MCQ within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong. MCQ on Transistors Biasing has features of randomization which feel you a new question set at every attempt.

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Transistor Biasing MCQ

Transistor Biasing MCQ (Transistor Biasing Multiple Choice Questions and Answers)

1 / 39

The circuit that provides the best stabilization of operating point is …………

Base resistor bias

Collector feedback bias

Potential divider bias

None of the above

2 / 39

In the above question (Q38.) , what is the collector voltage?

3 V

8 V

6 V

7 V

3 / 39

. Transistor biasing represents ……………. conditions

a.c.

d.c.

both a.c. and d.c.

none of the above

4 / 39

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ………..

6 mA

3 mA

1 mA

5 / 39

For faithful amplification by a transistor circuit, the value of VBE should ………. for a silicon transistor

Be zero

Be 0.01 V

Not fall below 0.7 V

Be between 0 V and 0.1 V

6 / 39

For germanium transistor amplifier, VCE should ………….. for faithful amplification

Be zero

Be 0.2 V

Not fall below 0.7 V

None of the above

7 / 39

Operating point represents …………..

Values of IC and VCE when signal is applied

The magnitude of signal

Zero signal values of IC and VCE

None of the above

8 / 39

The leakage current in a silicon transistor is about ………… the leakage current in a germanium transistor

One hundredth

One tenth

One thousandth

One millionth

9 / 39

In a particular biasing circuit, the value of RE is about ………

10 kΩ

1 kΩ

100 kΩ

800 kΩ

10 / 39

The point of intersection of d.c. and a.c. load lines represents …………..

Operating point

Current gain

Voltage gain

None of the above

11 / 39

The operating point is also called the ………….

Cut off point

Quiescent point

Saturation point

None of the above

12 / 39

In the design of a biasing circuit, the value of collector load RC is determined by …………

VCE consideration

VBE consideration

IB consideration

None of the above

13 / 39

Thermal runaway occurs when ……….

Collector is reverse biased

Transistor is not biased

Emitter is forward biased

Junction capacitance is high

14 / 39

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by …………

100 µA

25 µA

20 µA

50 µA

15 / 39

The stability factor of a collector feedback bias circuit is ……….. that of base resistor bias.

The same as

More than

Less than

None of the above

16 / 39

For faithful amplification by a transistor circuit, the value of VCE should ……….. for silicon transistor

Not fall below 1 V

Be zero

Be 0.2 V

None of the above

17 / 39

If the value of collector current IC increases, then the value of VCE …………

Remains the same

Decreases

Increases

None of the above

18 / 39

For proper operation of the transistor, its collector should have …………

Proper forward bias

Proper reverse bias

Very small size

None of the above

19 / 39

The base resistor method is generally used in ………

Amplifier circuits

Switching circuits

Rectifier circuits

None of the above

20 / 39

The disadvantage of voltage divider bias is that it has ………….

High stability factor

Low base current

Many resistors

None of the above

21 / 39

When the temperature changes, the operating point is shifted due to …….

Change in ICBO

Change in VCC

Change in the values of circuit resistance

None of the above

22 / 39

The value of stability factor for a base resistor bias is …………

RB (β+1)

(β+1)RC

(β+1)

1-β

23 / 39

The zero signal IC is generally ……………… mA in the initial stages of a transistor amplifier

Mora than 10

24 / 39

A silicon transistor is biased with base resistor method. If β=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB?

105 kΩ

530 kΩ

315 kΩ

None of the above

25 / 39

. If the temperature increases, the value of VCE …………

Remains the same

Is increased

Is decreased

None of the above

26 / 39

Transistor biasing is generally provided by a …………….

Biasing circuit

Bias battery

Diode

None of the above

27 / 39

The stabilisation of operating point in potential divider method is provided by ……….

RE consideration

RC consideration

VCC consideration

None of the above

28 / 39

For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than

10 IB

3 IB

2 IB

4 IB

29 / 39

In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?

2000 Ω

1400 Ω

800 Ω

1600 Ω

30 / 39

In a base resistor method, if the value of β changes by 50, then collector current will change by a factor ………

100

200

31 / 39

If biasing is not done in an amplifier circuit, it results in ……………

Decrease in the base current

Unfaithful amplification

Excessive collector bias

None of the above

32 / 39

Transistor biasing is done to keep ………… in the circuit

Proper direct current

Proper alternating current

The base current small

Collector current small

33 / 39

An ideal value of stability factor is …………..

100

200

more than 200

34 / 39

The disadvantage of base resistor method of transistor biasing is that it …………

Is complicated

Is sensitive to changes in ß

Provides high stability

None of the above

35 / 39

For proper amplification by a transistor circuit, the operating point should be located at the ………….. of the d.c. load line

The end point

Middle

The maximum current point

None of the above

36 / 39

In a transistor amplifier circuit VCE = VCB + ……………..

VBE

2VBE

5VBE

None of the above

37 / 39

In voltage divider bias, VCC = 25 V; R1 = 10 kΩ; R2 = 2.2 V ; RC = 3.6 V and RE =1 kΩ. What is the emitter voltage?

6.7 V

5.3 V

4.9 V

3.8 V

38 / 39

The value of VBE …………….

Depends upon IC to moderate extent

Is almost independent of IC

Is strongly dependant on IC

None of the above

39 / 39

. The operating point ………………… on the a.c. load line

Also line

Does not lie

May or may not lie

Data insufficient

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MCQ on Transistor Biasing(Transistor Biasing Multiple Choice Questions and Answers)

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