MCQ on Transistor Biasing(Transistor Biasing Multiple Choice Questions and Answers)

MCQ on Transistor Biasing with answers and explanations for placement tests and job interviews. These solved Transistor Biasing MCQ are useful for the campus placement for all freshers including Engineering Students, MCA students, Computer and IT Engineers, etc.

Our Transistor Biasing (Transistor Biasing multiple Choice Questions and Answers) focuses on the basic concept of Transistor Biasing. We will regularly update the quiz and most interesting thing is that questions come in a random sequence. So every time you will feel new questions.

We have already published a blog post that contains short questions related to embedded C. If you want you can also see this blog post. It would help you in your preparation. “Embedded  C Interview Questions”.

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So let’s see the set of MCQ on Transistor Biasing (Multiple Choice Questions & Answers on “Transistor Biasing ”).

Guideline of Transistors Biasing MCQ:

This MCQ on Transistors Biasing is intended for checking your knowledge of Transistors Biasing. It takes 40 minutes to pass the MCQ on Transistors Biasing. If you don’t finish the Transistor Biasing MCQ within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong. MCQ on Transistors Biasing has features of randomization which feel you a new question set at every attempt.

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Transistor Biasing MCQ

MCQ on Transistor Biasing

Transistor Biasing MCQ (Transistor Biasing Multiple Choice Questions and Answers)

1 / 39

If the value of collector current IC increases, then the value of VCE …………

2 / 39

For faithful amplification by a transistor circuit, the value of VBE should ………. for a silicon transistor

3 / 39

. Transistor biasing represents ……………. conditions

4 / 39

In a base resistor method, if the value of β changes by 50, then collector current will change by a factor ………

5 / 39

The stabilisation of operating point in potential divider method is provided by ……….

6 / 39

If biasing is not done in an amplifier circuit, it results in ……………

7 / 39

For proper amplification by a transistor circuit, the operating point should be located at the ………….. of the d.c. load line

8 / 39

The operating point is also called the ………….

9 / 39

The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 µA, then IC will change by …………

10 / 39

In the above question (Q38.) , what is the collector voltage?

11 / 39

When the temperature changes, the operating point is shifted due to …….

12 / 39

For proper operation of the transistor, its collector should have …………

13 / 39

For faithful amplification by a transistor circuit, the value of VCE should ……….. for silicon transistor

14 / 39

In the design of a biasing circuit, the value of collector load RC is determined by …………

15 / 39

A silicon transistor is biased with base resistor method. If β=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB?

16 / 39

In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?

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The disadvantage of voltage divider bias is that it has ………….

18 / 39

The base resistor method is generally used in ………

19 / 39

. If the temperature increases, the value of VCE …………

20 / 39

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ………..

21 / 39

The leakage current in a silicon transistor is about ………… the leakage current in a germanium transistor

22 / 39

The circuit that provides the best stabilization of operating point is …………

23 / 39

The disadvantage of base resistor method of transistor biasing is that it …………

24 / 39

Transistor biasing is done to keep ………… in the circuit

25 / 39

In a particular biasing circuit, the value of RE is about ………

26 / 39

In voltage divider bias, VCC = 25 V; R1 = 10 kΩ; R2 = 2.2 V ; RC = 3.6 V and RE =1 kΩ. What is the emitter voltage?

27 / 39

In a transistor amplifier circuit VCE = VCB + ……………..

28 / 39

The point of intersection of d.c. and a.c. load lines represents …………..

29 / 39

. The operating point ………………… on the a.c. load line

30 / 39

For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than

31 / 39

The value of VBE …………….

32 / 39

Operating point represents …………..

33 / 39

Transistor biasing is generally provided by a …………….

34 / 39

For germanium transistor amplifier, VCE should ………….. for faithful amplification

35 / 39

The zero signal IC is generally ……………… mA in the initial stages of a transistor amplifier

36 / 39

The value of stability factor for a base resistor bias is …………

37 / 39

An ideal value of stability factor is …………..

38 / 39

The stability factor of a collector feedback bias circuit is ……….. that of base resistor bias.

39 / 39

Thermal runaway occurs when ……….

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