MCQ on Semiconductor Theory (Semiconductor Theory Multiple Choice Questions)

June 11, 2021

MCQ on Semiconductor Theory with answers and explanations for placement tests and job interviews. These solved Semiconductor Theory MCQ are useful for the campus placement for all freshers including Engineering Students, MCA students, Computer and IT Engineers, etc.

Our MCQ on Semiconductor Theory (Semiconductor Theory multiple Choice Questions and Answers) focuses on the basic concept of Semiconductor Theory. We will regularly update the quiz and most interesting thing is that questions come in a random sequence. So every time you will feel new questions.

We have already published a blog post that contains short questions related to embedded C. If you want you can also see this blog post. It would help you in your preparation. “Embedded  C Interview Questions”.

So let’s see the set of MCQ on Semiconductor Theory (Multiple Choice Questions & Answers on “Semiconductor Theory”).

Guideline of Semiconductor Theory MCQs:

This MCQ on Semiconductor Theory is intended for checking your knowledge of Semiconductor Theory. It takes 40 minutes to pass the MCQ on Semiconductor Theory. If you don’t finish the Semiconductor Theory MCQ within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong. MCQ on Semiconductor Theory has features of randomization which feel you a new question set at every attempt.

In this Semiconductor Theory Quiz, we have also implemented a feature that not allowed the user to see the next question or finish the Semiconductor Theory quiz without attempting the current Semiconductor Theory MCQ.

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You have 40 minutes to take the Semiconductor Theory MCQs

Semiconductor Theory MCQ

MCQ on Transistors

Semiconductor Theory MCQ

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The random motion of holes and free electrons due to thermal agitation is called ……….

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Under normal conditions a diode conducts current when it is ……………

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At room temperature, an intrinsic silicon crystal acts approximately as ……

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Addition of trivalent impurity to a semiconductor creates many ……..

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An n-type semiconductor is ………

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Addition of pentavalent impurity to a semiconductor creates many ……..

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A semiconductor is formed by ……… bonds.

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The battery connections required to forward bias a pn junction are ……

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As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

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At room temperature, an intrinsic semiconductor has ……….

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The strength of a semiconductor crystal comes from ……..

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The most commonly used semiconductor is ………..

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The term bias in electronics usually means ……….

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A forward biased pn junction diode has a resistance of the order of

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At absolute temperature, an intrinsic semiconductor has ……….

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A semiconductor has generally ……………… valence electrons.

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A trivalent impurity has ….. valence electrons

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The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

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The resistivity of a pure silicon is about ……………

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In the depletion region of a pn junction, there is a shortage of ……..

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The leakage current in a pn junction is of the order of

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A semiconductor has ………… temperature coefficient of resistance.

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A hole and electron in close proximity would tend to ……….

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When a pure semiconductor is heated, its resistance …………..

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A hole in a semiconductor is defined as …………….

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A reverse bias pn junction has …………

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A pentavalent impurity has ………. Valence electrons

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The barrier voltage at a pn junction for germanium is about ………

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With forward bias to a pn junction , the width of depletion layer ………

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In a semiconductor, current conduction is due to ……..

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In an intrinsic semiconductor, the number of free electrons ………

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When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

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A reverse biased pn junction has resistance of the order of

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When a pentavalent impurity is added to a pure semiconductor, it becomes ………

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The resistivity of pure germanium under standard conditions is about ……….

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A pn junction acts as a ……….

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The leakage current across a pn junction is due to …………..

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