MCQ on Semiconductor Theory (Semiconductor Theory Multiple Choice Questions)

MCQ on Semiconductor Theory with answers and explanations for placement tests and job interviews. These solved Semiconductor Theory MCQ are useful for the campus placement for all freshers including Engineering Students, MCA students, Computer and IT Engineers, etc.

Our MCQ on Semiconductor Theory (Semiconductor Theory multiple Choice Questions and Answers) focuses on the basic concept of Semiconductor Theory. We will regularly update the quiz and most interesting thing is that questions come in a random sequence. So every time you will feel new questions.

We have already published a blog post that contains short questions related to embedded C. If you want you can also see this blog post. It would help you in your preparation. “Embedded  C Interview Questions”.

So let’s see the set of MCQ on Semiconductor Theory (Multiple Choice Questions & Answers on “Semiconductor Theory”).

Guideline of Semiconductor Theory MCQs:

This MCQ on Semiconductor Theory is intended for checking your knowledge of Semiconductor Theory. It takes 40 minutes to pass the MCQ on Semiconductor Theory. If you don’t finish the Semiconductor Theory MCQ within the mentioned time, all the unanswered questions will count as wrong. You can miss the questions by clicking the “Next” button and return to the previous questions by the “Previous” button. Every unanswered question will count as wrong. MCQ on Semiconductor Theory has features of randomization which feel you a new question set at every attempt.

In this Semiconductor Theory Quiz, we have also implemented a feature that not allowed the user to see the next question or finish the Semiconductor Theory quiz without attempting the current Semiconductor Theory MCQ.

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You have 40 minutes to take the Semiconductor Theory MCQs


Semiconductor Theory MCQ

MCQ on Transistors

Semiconductor Theory MCQ

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The random motion of holes and free electrons due to thermal agitation is called ……….

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The strength of a semiconductor crystal comes from ……..

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A hole and electron in close proximity would tend to ……….

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The term bias in electronics usually means ……….

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A reverse bias pn junction has …………

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At room temperature, an intrinsic silicon crystal acts approximately as ……

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The battery connections required to forward bias a pn junction are ……

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The leakage current in a pn junction is of the order of

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The leakage current across a pn junction is due to …………..

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In an intrinsic semiconductor, the number of free electrons ………

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At room temperature, an intrinsic semiconductor has ……….

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A semiconductor is formed by ……… bonds.

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The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

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When a pure semiconductor is heated, its resistance …………..

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Addition of trivalent impurity to a semiconductor creates many ……..

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A trivalent impurity has ….. valence electrons

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In a semiconductor, current conduction is due to ……..

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At absolute temperature, an intrinsic semiconductor has ……….

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As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

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When a pentavalent impurity is added to a pure semiconductor, it becomes ………

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The resistivity of pure germanium under standard conditions is about ……….

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The most commonly used semiconductor is ………..

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An n-type semiconductor is ………

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The resistivity of a pure silicon is about ……………

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A reverse biased pn junction has resistance of the order of

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When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

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A hole in a semiconductor is defined as …………….

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In the depletion region of a pn junction, there is a shortage of ……..

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With forward bias to a pn junction , the width of depletion layer ………

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A semiconductor has ………… temperature coefficient of resistance.

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A forward biased pn junction diode has a resistance of the order of

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Addition of pentavalent impurity to a semiconductor creates many ……..

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A pn junction acts as a ……….

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A semiconductor has generally ……………… valence electrons.

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Under normal conditions a diode conducts current when it is ……………

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The barrier voltage at a pn junction for germanium is about ………

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A pentavalent impurity has ………. Valence electrons

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